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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
July 2007
FDA20N50 / FDA20N50_F109
500V N-Channel MOSFET
Features
* 22A, 500V, RDS(on) = 0.23 @VGS = 10 V * Low gate charge ( typical 45.6 nC) * Low Crss ( typical 27 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDA20N50
500 22 13.2 88 30 1110 22 28.0 4.5 280 2.3 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.44 -40
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDA20N50 / FDA20N50_F109 Rev. B1
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDA20N50 FDA20N50
Device
FDA20N50 FDA20N50_F109
Package
TO-3P TO-3PN
Reel Size
---
Tape Width
---
Quantity
30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 11A VDS = 40V, ID = 11A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
500 ------
Typ
-0.50 -----
Max Units
--1 10 100 -100 V V/C A A nA nA
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.20 24.6 5.0 0.23 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2400 355 27 3120 465 -pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 20A VGS = 10V
(Note 4, 5) (Note 4, 5)
VDD = 250V, ID = 20A RG = 25
--------
95 375 100 105 45.6 14.8 21.6
200 760 210 220 59.5 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 22A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 22A VGS = 0V, IS = 20A dIF/dt =100A/s
(Note 4)
------
---507 7.20
20 80 1.4 ---
A A V ns C
2 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
Figure 2. Transfer Characteristics
2
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID, Drain Current [A]
10
1
150 C
1
o
10
25 C
o
-55 C
o
10
0
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
* Notes : 1. VDS = 40V 2. 250s Pulse Test
0
10
-1
10
0
10
1
10
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.8
RDS(ON) [], Drain-Source On-Resistance
0.6
VGS = 10V
0.4
IDR, Reverse Drain Current [A]
10
1
150 C
o
25 C
o
VGS = 20V
0.2
* Note : TJ = 25 C
o
*Notes : 1. VGS = 0V 2. 250s Pulse Test
0
0.0 0 15 30 45 60 75 90
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 5000 Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VGS, Gate-Source Voltage [V]
VDS = 250V VDS = 400V
Coss
Capacitances [pF]
4000
8
Ciss
3000
6
2000
* Note : 1. VGS = 0 V
4
1000
Crss
2. f = 1 MHz
2
* Note : ID = 20A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
1.1
RDS(ON), (Normalized) RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.5
2.0
2.0
1.5
1.0
1.5
1.0
1.0
0.5
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.0 -100 -50 0 50 100
o
* Notes : 1. VGS = 10 V 2. ID = 11 A 150
* Notes : 1. VGS = 10 V 2. ID = 5.5 A
200
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
TJ, 0 Junction Temperature [ C] 50 100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
o
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
25
10
2
10 s
20
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
1 ms 10 ms DC 100 ms
ID, Drain Current [A]
10
3
100 s
15
10
10
0
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
5
10
-1
10
0
10
1
10
2
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
(t), Thermal Response
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1
* N o te s :
t2
o
JC
10
-2
1 . Z JC ( t) = 0 .4 4 C /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z JC ( t)
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
7 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
8 FDA20N50 / FDA20N50_F109 Rev. B1
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FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
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PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
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